TFLN Devices

TFLN PIC technology allows for compact optical waveguides to be monolithically fabricated, reducing the gap between electrodes, resulting in much lower driving voltage (hence much lower power consumption) and much smaller device length. Our TFLN PIC technology allows the production of Intensity Modulator,Phase Modulator, Intensity Modulator Hybrid with DFB LD,IQ Modulator.

40GHz Thin Film Lithium Niobate Fiber Optical Intensity Modulator-Low Vp ( Bend Type)

  • Operating Wavelength 1530-1610nm; Operating Bandwidth 40GHz

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    20GHz Low Vp TFLN Fiber Optical Intensity Modulator ( Bend Type)

  • Operating Wavelength 1530-1610nm; Operating Bandwidth 20GHz

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    1310nm 60GHZ Bent-waveguide electro-optic intensity TFLN modulator chip

  • Operating Wavelength 1260-1360nm; Operating Bandwidth 60GHz

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    1310nm 40GHZ Bent-waveguide electro-optic intensity TFLN modulator chip

  • Operating Wavelength 1260-1360nm; Operating Bandwidth 40GHz

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    1550nm 40GHZ Bent-waveguide electro-optic intensity TFLN modulator chip

  • Operating Wavelength 1530-1565nm; Operating Bandwidth 40GHz

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    1550nm 60GHZ Bent-waveguide electro-optic intensity TFLN modulator chip

  • Operating Wavelength 1530-1565nm; Operating Bandwidth 60GHz

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    1550nm 60G electro optic intensity TFLN Modulator Chips

  • Operating Wavelength 1530-1565nm, Operating Bandwidth 60GHz

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    1550nm 40G electro optic intensity TFLN Modulator Chips

  • Operating Wavelength 1530-1565nm, Operating Bandwidth 40GHz

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    40 GHz IQ Modulator

  • Operating Wavelength 1530-1565nm,Operating Bandwidth 40GHz

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    20GHz IQ Modulator

  • Operating Wavelength 1530-1565nm,Operating Bandwidth 20GHz

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    70 GHz C-Band Thin-Film Lithium Niobate Intensity Modulator

  • Operating Wavelength 1530-1565nm, Operating Bandwidth 70GHz

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    110 GHz C-Band Thin-Film Lithium Niobate Intensity Modulator

  • Operating Wavelength 1530-1565nm, Operating Bandwidth 110GHz

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