110 GHz C-Band Thin-Film Lithium Niobate Intensity Modulator

110 GHz C-Band Thin-Film Lithium Niobate Intensity Modulator

Operating Wavelength 1530-1565nm, Operating Bandwidth 110GHz

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Overview
Parameters
PDF
RFQ

Overview

The Thin-Film Lithium Niobate Ultra-High Bandwidth Intensity Modulator is a high-performance electro-optic conversion device independently developed by our company, with full proprietary intellectual property rights. The product is packaged using high-precision optical coupling and assembly techniques, achieving an electro-optic 3 dB bandwidth of up to 110 GHz.Compared with traditional bulk lithium niobate crystal modulators, this product features low half-wave voltage (Vπ), high stability, compact device size, and thermo-optic bias control. It can be widely applied in digital optical communications, microwave photonics, backbone communication networks, and communication-related research projects.

Product features：Operating Wavelength 1530-1565nm, Operating Bandwidth 110GHz

Part Number：BC6PPBM71

Application area：

Parameters

Product parameters: C band

Category	Parameters	Symbol	Unit	Index
Optical performance (@25°C)	Operating Wavelength (*)	λ	nm	~1550
	Optical Extinction Ratio (@ DC) (**)	ER	dB	≥20
	Optical Return Loss	ORL	dB	≤-27
	Optical Insertion Loss	IL	dB	Maximum value: 6 Typical value: 5
Electrical Performance (@25°C)	3 dB Electro-Optical Bandwidth (from 2 GHz)	S21	GHz	Minimum value: 100 Typical value: 105
	RF Half-Wave Voltage (@ 50 kHz)	Vπ	V	≤4
	Thermal Bias Half-Wave Power	Pπ	mW	≤50
	RF Return Loss	S11	dB	≤-10
Operating Conditions	Operating Temperature (*)	TO	°C	-20~70

* Customizable.

** High extinction ratio (> 25 dB) available on request.

Damage threshold

If the device operates beyond the maximum damage threshold, it will cause irreversible damage to the device.

Parameters	Symbol	Min.	Max.	Unit
RF input power	Sin	-	18	dBm
RF input swing voltage	Vpp	-2.5	+2.5	V
RF input RMS voltage	Vrms	-	1.78	V
Optical input power	Pin	-	20	dBm
Thermal bias voltage	Uheater	-	4.5	V
Thermal bias current	Iheater	-	50	mA
Storage temperature	TS	-40	85	℃
Relative humidity (non-condensing)	RH	5	90	%

S21 test sample image (110 GHz typical)

Figure 1: S21

Figure 2: S11

Electrostatic Discharge (ESD) Protection

This product contains ESD-sensitive components (MPDs). Necessary ESD protection measures must be taken when using it.

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110 GHz C-Band Thin-Film Lithium Niobate Intensity Modulator.pdf