1550nm 60GHZ Bent-waveguide electro-optic intensity TFLN modulator chip

1550nm 60GHZ Bent-waveguide electro-optic intensity TFLN modulator chip

Operating Wavelength 1530-1565nm; Operating Bandwidth 60GHz

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Overview
Parameters
PDF
RFQ

Overview

UFP offers Thin Film Lithium Niobate (TFLN) modulator chips in different formats and data rate, including DR8 and 2 x FR4 @ 100 Gbps/lane for 800 Gbps applications and DR4 @ 400 Gbps/lane for 1.6 Tbps applications. With expereince and know-how, AFR engineers are available to customize our products to meet customers' specific requirements.

Product features：Operating Wavelength 1530-1565nm; Operating Bandwidth 60GHz

Part Number：TFLNC60G-1550

Application area：

Parameters

Product Specifications (Test conditions: 25 °C, unless otherwise specified)

Parameters	Symbol	Test condition	Min.	Typ.	Max.	Unit
Operating Wavelength	λ		1550(C band)			nm
Insertion Loss	IL	1550nm 0dBm CW		4	4.5	dB
RF Half-Wave Voltage	Vπ	1550nm CW fmod=50kHz		3.3	3.5	V
3 dB Bandwidth	S₂₁		40/60			GHz
Modulation Extinction Ratio (ER)	ER		20			dB
RF Return Loss	S₁₁				-10	dB
Thermal Tuning Resistance	R			80		Ω
Thermal Tuning Pπ	Pπ			50		mW
Input/Output Waveguide Mode Field	MFD		4/9			μm
Input/Output Waveguide Spacing	Pitch		1600			μm

Maximum Absolute Ratings

Parameter Name	Symbol	Rated Value	Unit
Input Optical Power	Ps,o	23	dBm
Input Optical Return Loss	Ps,rf	23	dBm
Thermoelectric Cooler Voltage	VH	±8	V
Operating Temperature	TW	-40 ~ +85	°C
Storage Temperature	TS	-40 ~ +85	°C

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1550nm 60GHZ Bent-waveguide electro-optic intensity TFLN modulator chip.pdf