20GHZ TFLN MZ Modulator with Integrated DFB LASER

20GHZ TFLN MZ Modulator with Integrated DFB LASER

Output Power:＞10mW, Bandwidth:20Ghz, PER＞20dB,Max Modulation FC/APC Connector,Output Fiber:PM1550 fibers with Slow axis alignment

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Overview
Parameters
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RFQ

Overview

Linibate’TFLN intensity modulator (integrated light source) is a high-performance, highly integrated electro-optic conversion device independently developed by our company and for which we possess complete independent intellectual property rights. This product integrates a low-noise DFB laser and a high-stability thin-film lithium niobate modulator chip, packaged using high-precision coupling technology to achieve ultra-high electro-optic conversion efficiency. Compared to traditional lithium niobate crystal modulators, this product features low half-wave voltage, high stability, small device size, and thermo-optical bias control, making it widely applicable in fields such as digital optical communication, microwave photonics, backbone communication networks, and communication-related research projects.

Product features：Output Power:＞10mW, Bandwidth:20Ghz, PER＞20dB,Max Modulation FC/APC Connector,Output Fiber:PM1550 fibers with Slow axis alignment

Part Number：LN20H1550DFB

Application area：Optical frequency conversion、 Sum-frequency generation、 Difference-frequency generation

Parameters

Features

■ Integrated low-RIN laser source

■ RF bandwidth up to 20 GHz

■ Half-wave voltage as low as 3.0V

■ Modulator fully open output optical power up to 12 dBm

■ High integration, small device size

Standard Specifications

Category	Parameters	Symbol	Unit	Performance
Optical Characteristics	Operating Wavelength (@TEC 25℃,LD 350 mA)	λ	nm	1550±2
	Optical extinction ratio (@DC)(*)	ER	dB	≥20
	Optical return loss	ORL	dB	≤-27
	Optical Output Power at Full Modulation (@TEC 25℃,LD 350 mA) (**)	Pout	dBm	Max.：12 Typ.：10
	Relative Intensity Noise (@2 GHz,TEC 25°℃, LD 250 mA)	RINLD	dBc/Hz	Max.：-158 Typ.：-160
Electrical Characteristics	3 dB Electro-Optic Bandwidth (≥ 2 GHz)	S21	GHz	Min.：18 Typ.：20
	RF Half-Wave Voltage (@50 kHz)	Vπ	V	Max.3.5 Typ.：3.0
	Thermal Bias Half-Wave Power	Pπ	mw	≤50
	Recommended TEC Set Temperature Range	TTEC	℃	10~40
	Thermistor Resistance (@ Room Temperature)	Rth	Ohm	10 K±1.0%
	RF Return Loss (2 GHz – 40 GHz)	S11	dB	≤-10
Operating conditions	Operating Temperature (@ TEC = 40 °C)	To	℃	-40~70

*High Extinction Ratio (>25 dB) customizable.

**High Optical Output Power (>12 dBm) customizable.

Damage Threshold

Exceeding the maximum damage threshold may cause irreversible damage to the device. Such damage is not covered under the warranty.

Test conditions: 25 °C, unless otherwise specified

Parameter	Symbol	Min.	Max.	Unit
RF Input Power	Sin	-	18	dBm
RF Input Peak-to-Peak Voltage	Vpp	-2.5	+2.5	V
RF Input RMS Voltage	Vrms	-	1.78	V
Laser Diode Current	lLD	-	400	mA
TEC Current	ITEC		1.5	A
Thermal Bias Voltage	Uneater	-	4.5	V
Thermal Bias Current	lneater	-	50	mA
Storage Temperature	Ts	-40	85	℃
Relative Humidity (non-condensing)	RH	5	90	%

18GHZ Modulation Signal

Dimensions and Pin definitions（Unit in mm)

Note: Data marked with "REF." are for reference only.

Ordering info

P/N:LN20H1550DFB 20GHZ TFLN MZ Modulator with Integrated DFB LASER

FC/APC Connector,Output Fiber:PM1550 fibers with Slow axis alignment，PER＞20dB,Max Modulation Bandwidth:20Ghz,Output Power:＞10mW.

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