40 GHz Photodetector Chip
40 GHz Photodetector Chip
Overview
Parameters
High-speed photodetector modules are of interest for the development of next.generation optical communication linksin datacom and telecom. Since these R&D links are always a step ahead interms of symbol rates, photodetector modules with a RF bandwidth beyond state-of-the-art are needed at the receiver side. Furthermore, the high-speed performance of the photodetector modules makes them applicable to microwave photonics.The photodetector chips inside the modules are based on mature InP technology and are fabricated at the wafer process line of offering Telcordia and space-qualifiedprocesses. The chips are packaged atFraunhofer HHl facilities.
Test conditions: 25 °C, unless otherwise specified
Parameters | Symbol | Test condition | Min. | Typ. | Max. | Unit |
Operating Temperature | T0 | 0 | 75 | ℃ | ||
Storage Temperature | Ts | -40 | 85 | ℃ | ||
Operating Wavelength | λ | 1550 | nm | |||
Bias Voltage | Vb | 3 | 5 | 9 | V | |
Active Area Diameter | Ф | 16 | μm | |||
Saturation Optical Power | Ps | λ = 1550 nm, Vb= 5 V | 10 | dBm | ||
Responsivity | R | λ = 1550 nm, Vb= 5 V | 0.8 | A/W | ||
Dark Current | Id | Vb= 5 V | 0.5 | nA | ||
3dB Bandwidth | BW | Ps,o = 5 mW, Vb= 5 V | 40 | GHz | ||
Bandwidth and Responsivity value test
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40 GHz Photodetector Chip.pdf